PhD for R&D; CMOS Integration

Experience: Not Available to Not Available years

Location: DEU - Saxony - Dresden

Skills: HfO₂-based devices, ferroelectric devices, FeFET, FeCAP, HfO₂ thin films, polarization switching, retention, endurance, variability, TEM, STEM, SEM, data analysis, Python, semiconductor device physics, MOSFETs, ferroelectric devices

Core Research Topics
Ferroelectric HfO₂ Devices (FeFET / FeCAP) Optimization of HfO₂ thin films for stable ferroelectric behavior and investigation of polarization switching, retention, endurance, and variability. Device-level physics analysis of ferroeletricity based CMOS embedded devices and in-memory computing applications. Exploration of integration schemes into advanced FDSOI (FDX®) and bulk CMOS technologies.

Advanced Characterization & Materials Analysis
Structural and electrical analysis using: TEM / STEM (including advanced contrast techniques such as DPC) / SEM and nanoscale imaging tools Electrical device and simple circuit characterization and mapping the results to structural data.

Required Qualifications
Master’s / Diplom degree in Materials Science, Physics, Electrical Engineering, or a related discipline Solid expertise in semiconductor materials analysis and nanostructure characterization.



Hands-on experience with TEM / STEM / SEM characterization FIB preparation and analysis are beneficial. Experience in data analysis using Python Background in semiconductor device physics (e.g., MOSFETs, ferroelectric devices) Exposure to HfO₂-based ferroelectric devices / FeFETs are desirable Proven research capability through Thesis work at leading research institutes and Scientific publications or conference contributions.

What We Offer
Direct supervision within the Technology Architect /TD Group at GlobalFoundries Dresden Access to state-of-the-art semiconductor fabrication and characterization infrastructure Opportunity to work at the forefront of Ferroelectric memory technologies and AI hardware and in-memory computing Strong collaboration with internal R&D;, device engineering, and external research partners Opportunity to publish in leading journals and present at top-tier conferences Integration into one of Europe’s leading semiconductor research ecosystems.

Key Details
Start Date: October 1st, 2026; limited contract for 3 years. Location: GlobalFoundries Dresden, F1. Degree: PhD (in cooperation with a partner university, e.g. TU Dresden) Information about our benefits you can find here: https://gf.com/careers/opportunities-in-europe/

📌 PhD for R&D CMOS Integration (Mumbai)
🏢 Globalfoundries
📍 Mumbai