Location: Location: Bengaluru/Bhubaneswar/Ranchi

Experience: 5 - 10 Years

Technical Requirements:
Memory Architecture: In-depth knowledge of memory design architectures,

including SRAM, DRAM, Flash, and other non-volatile memory types.
Circuit Design: Expertise in designing memory cells, sense amplifiers, decoders, and

other associated memory circuit blocks.
Process Technology: Familiarity with advanced CMOS technology nodes and their

impact on memory design, including scaling challenges.
Design Optimization: Experience in optimizing memory for performance, power,

and area, including techniques for reducing leakage and improving access times.
Verification & Validation: Proficient in memory verification techniques, including

corner analysis, reliability testing, and post-silicon validation.
EDA Tools: Hands-on experience with memory design tools, including Cadence,

Synopsys, and Mentor Graphics.
Yield Enhancement:



Knowledge of yield enhancement techniques, including

redundancy and error correction codes (ECC).

Expectations from the Role:
Technical Leadership: Robust technical leadership skills with the ability to guide and

mentor junior team members.
Problem-Solving: Excellent problem-solving abilities, particularly in diagnosing and

resolving memory design challenges.
Innovation: Ability to innovate and drive improvements in memory design,

balancing performance and manufacturability.
Collaboration: Solid communication and teamwork skills, with the ability to work

effectively with cross-functional teams.
Project Focus: Ability to manage and prioritize multiple projects, ensuring timely

and successful project completion.

📌 Memory Design Engineer Bengaluru
🏢 ARF DESIGN
📍 Bengaluru