Principal RF Design Engineer

- October 8, 2026

About Us
TagoreTech is developing disruptive high-power RF technology for next-generation communication systems. We are a fabless semiconductor company using wide bandgap processes and innovative circuit design to solve complex RF challenges. Our product portfolio includes high-power RF switches, low-noise amplifiers and power amplifiers. These are essential building blocks for 5G infrastructure, aerospace and defense, automotive systems and advanced consumer electronics.

Overview
TagoreTech is seeking an experienced, innovation-driven Principal RF Design Engineer to join our elite RF engineering team. You will lead the creation of next-generation product technology for high-power radios used in military communications, cellular infrastructure, radar, unmanned aerial vehicles and medical applications. You will architect and design high-power RF switches, power amplifiers (PAs), low-noise amplifiers (LNAs) and integrated front-end modules (FEMs) in GaN and GaAs, taking products from concept through the lab and into production.

Key Responsibilities

- Lead the design and development of next-generation high-power RF front-end components: switches, PAs, LNAs and integrated FEMs.
- Architect future RF product concepts, and work with Marketing and Design Management to set product roadmaps and semiconductor process requirements.
- Drive IP development, circuit-level innovation and high-power package definition to meet thermal and electrical requirements.
- Perform transistor-level circuit design, non-linear simulation and optimization in Cadence Virtuoso, Keysight ADS or AWR Microwave Office.
- Run 2D and 3D EM modeling of chip layouts, package parasitics and board-level interactions to achieve tight model-to-measurement correlation.
- Lead lab characterization with the validation teams, verifying performance across power, frequency and temperature.




- Work with Product and Test Engineering to set production final test plans and specifications.
- Provide technical oversight, lead design reviews, and mentor junior and mid-level RF engineers.

Required Qualifications

- An MSEE with 15+ years, or a PhD with 10+ years, of hands-on RFIC/MMIC design experience.
- A proven track record in transistor-level design of high-power RF circuits in GaN or GaAs processes.
- Expert proficiency in Cadence, Keysight ADS or AWR MWO, including non-linear modeling and 2D/3D EM simulation tools such as HFSS or Sonnet.
- A strong understanding of device physics, linear and non-linear model translation, and physical implementation constraints.
- Practical experience with RF characterization and high-power lab equipment: VNAs, spectrum analyzers, power meters and load-pull systems.

Preferred Qualifications

- Design experience with RF SOI switches, PIN diode switches or high-efficiency GaN power amplifiers.
- A deep understanding of high-power thermal management and of co-designing custom RF packages with their parasitics.

Success Traits

- A strong sense of ownership and the drive to see issues through to closure.
- The ability to explain complex technical tradeoffs to marketing partners, executive leadership and other non-technical stakeholders.
- Enjoyment of a fast-paced, innovation-focused environment where priorities change.
- Analytical thinking, a bias toward action, and a commitment to continuous improvement.
- A passion for mentoring and raising the technical bar across the team.

This position offers an exciting opportunity for professional growth in a fast-paced workplace where innovation is encouraged. TagoreTech offers competitive compensation and benefits, and a collaborative culture where your designs directly shape next-generation wireless systems.

Job Type: Full-time
Work Location: Kolkata
How to Apply: Send your resume directly to [email protected]

📌 Principal RF Design Engineer (Kolkata)
🏢 TagoreTech
📍 Kolkata