Job Summary We are looking for a Memory Design Engineer with robust fundamentals in advanced-node memory design. The ideal candidate will have hands-on experience in SRAM design, modeling, verification, and circuit design, with exposure to cutting-edge foundry technologies. Experience with Samsung Foundry is mandatory. Key Responsibilities
• Design and development of high-performance SRAM and memory circuits at advanced technology nodes.
• Memory circuit design, modeling, and verification across multiple process corners.
• Work on advanced foundry nodes (2nm / 3nm / 4nm); experience on lower nodes is highly preferred.
• Perform detailed circuit simulations, analysis, and debugging to meet PPA targets.
• Collaborate with foundry, layout, and verification teams to ensure robust memory design sign-off.
• Contribute to design reviews and drive solutions based on strong design fundamentals. Required Skills & Qualifications
• 3–8 years of hands-on experience in Memory Design.
• Strong expertise in SRAM design, memory modeling, verification, and circuit design.
• Solid understanding of advanced CMOS design concepts and deep-submicron effects.
• Proven experience working with Samsung Foundry (mandatory).
• Exposure to 2nm / 3nm / 4nm technology nodes; lower-node experience is strongly preferred.
• Strong problem-solving skills with a solid grasp of analog and digital circuit fundamentals.