Job Summary We are looking for a Memory Design Engineer with strong fundamentals in advanced-node memory design. The ideal candidate will have hands-on experience in SRAM design, modeling, verification, and circuit design, with exposure to cutting-edge foundry technologies.

Experience with Samsung Foundry is mandatory.

Key Responsibilities • Design and development of high-performance SRAM and memory circuits at advanced technology nodes.

• Memory circuit design, modeling, and verification across multiple process corners.

• Work on advanced foundry nodes (2nm / 3nm / 4nm);

experience on lower nodes is highly preferred.

• Perform detailed circuit simulations, analysis, and debugging to meet PPA targets.

• Collaborate with foundry, layout, and verification teams to ensure robust memory design sign-off.





• Contribute to design reviews and drive solutions based on solid design fundamentals.

Required Skills &

Qualifications • 3–8 years of hands-on experience in Memory Design.

• Strong expertise in SRAM design, memory modeling, verification, and circuit design.

• Solid understanding of advanced CMOS design concepts and deep-submicron effects.

• Proven experience working with Samsung Foundry (mandatory).

• Exposure to 2nm / 3nm / 4nm technology nodes; lower-node experience is strongly preferred.

• Strong problem-solving skills with a solid grasp of analog and digital circuit fundamentals.

Advanced Technology Nodes, CMOS Analog Circuit Design, Circuit Design, Debugging, Memory Design, Memory Verification

📌 Associate III - VLSI MDST (Noida)
🏢 UST
📍 Noida