06 Nov
|
Agnit Semiconductors
|
Bengaluru
06 Nov
Agnit Semiconductors
Bengaluru
Job Summary:
We are seeking a highly motivated and driven Device Engineer to join our engineering team. The successful candidate will be responsible for the design, development, characterization, modelling and analysis of gallium nitride devices within our product portfolio. This role requires a strong understanding of device physics, transistor (FET) design, process integration, and electrical characterization to support recent product development and continuous improvement initiatives.
Key Responsibilities:
- Design GaN HEMTs including discrete transistors and gate drivers using a foundry PDK toward meeting certain performance metrics.
- Complete layout design up to Design Rule Check on foundry PDK for GaN discretes and circuits
- Simulation of GaN device performance based on the design using foundry PDK
- Actively interfacing with the foundry.
- Characterization of fabricated GaN devices including extraction of key parameters.
- Model development and/or model validation using extensive characterization and testing of fabricated GaN devices
- Development of eval-boards based on fabricated GaN devices, actively interfacing with process, testing, packaging, reliability and circuits teams toward improvement and design of test plans.
- Working with packaging team on device packaging and characterization
- Working with reliability and qualification teams toward performance evaluation and various reliability tests on GaN devices and eval-boards, which will include design of fixtures and jigs.
- Stay up to date with industry trends, technologies, and best practices.
- Prepare technical reports, documentation, and presentations for internal and external stakeholders.
Qualifications:
Education:
- Master’s degree in EE/ECE/E&I;, Physics, or a related field. (Required)
- PhD (preferred) for Senior Device Engineer role.
Experience:
- 2+ years of experience with semiconductor transistors including device design, processing, modelling and characterization.
- A background in GaN HEMT technology would be highly desirable.
- Simulation and/or modelling of devices is an added advantage.
- Hands-on experience with electrical test equipment (e.g., probe stations, power supplies, oscilloscopes, etc.) and PCB design and/or mounting are indispensable.
- Experience with gate driver design for GaN power device is an added advantage.
Skills:
- Solid understanding of device physics and semiconductor transistor fundamentals.
- A good understanding of or hands-on experience in semiconductor device processing.
- Hands-on experience with electrical testing and PCB handling.
- Strong analytical and problem-solving skills.
- Excellent communication and teamwork abilities.
Preferred Qualifications:
- Experience with CMOS, GaN, SiC, or other advanced technologies.
- Experience with device reliability tests and characterization
- Familiarity with cleanroom practices and microfabrication techniques.
- Knowledge of reliability standards and failure analysis methodologies.
📌 Device Engineer (Bengaluru)
🏢 Agnit Semiconductors
📍 Bengaluru