About Texas Instruments

At TI, we engineer the future — one silicon innovation at a time. Our power management portfolio powers everything from electric vehicles to data centers, and now we're

doubling down on Gallium Nitride (GaN)

— the technology redefining what's possible in high-efficiency power conversion.

About the Role

We are assembling an elite team to design

next-generation, high-efficiency GaN power stage ICs . As a

GaN Power Architect , you will lead the full-stack execution — from silicon architecture to bench validation — of

high-speed, high-voltage GaN gate drivers and integrated power stage building blocks .

You will be the critical bridge between

advanced GaN semiconductor device physics

and

precision analog circuit design , driving breakthroughs in switching frequency, power density, and thermal performance.

What You'll Do

⚙️ Analog IC Design

Architect, design, and simulate custom analog and mixed-signal blocks for GaN power ICs Design high-speed gate drivers, level shifters, bootstrap circuits, UVLO, thermal shutdown, and fast overcurrent protection circuits

Silicon-Device Co-Design

Partner with device physics experts to model and optimize driver-device interaction Account for energetic R_DSon, current collapse, gate-charge (Q_g) characteristics, and 2DEG behavior

⚡ Transient & Parasitic Management

Engineer robust circuits capable of withstanding extreme

dV/dt (>100V/ns)

and

di/dt

transients Prevent false turn-on, shoot-through, and gate breakdown with surgical precision

Layout & Co-Extraction

Collaborate with layout engineers for

parasitics-aware design

(PEEC/EM extraction) Optimize ultra-low inductance driver loops and power interconnects

Silicon Validation





Lead bench characterization and debug of

first-silicon

in the lab Validate switching dynamics, efficiency curves, protection response times, and thermal boundaries

What You Bring

✅

Education & Experience:

B.S., M.S., or Ph.D. in Electrical Engineering (or related) with

5+ years

of hands-on analog/mixed-signal IC design experience in high-voltage or wide-bandgap (WBG) power management ✅

Solid Analog Design Fundamentals

— the kind that comes from doing, not just studying ✅

GaN Driver Expertise:

Proven track record designing high-speed, high-voltage gate drivers for GaN HEMTs (discrete or monolithically integrated) ✅

GaN Device Physics:

Deep understanding of V_th stability, gate degradation, Q_rr-equivalent loss mechanisms, dynamic R_DSon, and 2DEG physics ✅

EDA Proficiency:

Expert-level use of

Cadence Virtuoso, Spectre/Spectre21, Calibre (DRC/LVS/PEX) , and parasitic extraction workflows for high-frequency/high-power layouts ✅

Lab & Debug Skills:

Hands-on with high-bandwidth oscilloscopes, differential probes, and

double-pulse testing

setups

Bonus Points If You Have

⭐ Working knowledge of switching converter topologies — multiphase buck, resonant LLC, boost, or active clamp flyback ⭐ Experience with ultra-low inductance power packaging — QFN, flip-chip, embedded dies, or multi-chip modules ⭐ Exposure to volume GaN manufacturing, DFT, and high-reliability applications

Why TI? Work on technology that powers the world's most critical systems Access to world-class semiconductor fabrication and R&D; resources Collaborative culture where engineers lead innovation — not just execute it Competitive compensation, benefits, and long-term career growth

📌 Lead Analog IC Design Engineer — GaN Power Stage (Mumbai)
🏢 Texas Instruments
📍 Mumbai