Senior Memory Design Engineer (Bengaluru)

Senior Memory Design Engineer (Bengaluru)

12 Nov
|
Leadsoc Technologies
|
Bengaluru

12 Nov

Leadsoc Technologies

Bengaluru

Senior Memory Design Engineer

Location:
Bengaluru, India

Experience:
5–12 Years Role Overview Design, optimize, and verify high-speed, low-power embedded memory compilers and custom memory arrays (SRAM, Register Files, ROM) for advanced process nodes. You will own full-cycle memory architecture, transistor-level circuit design, PPA optimization, and silicon correlation.

Key Responsibilities
• Memory Architecture & Design: Architect and design custom SRAM bitcells, sense amplifiers, wordline drivers, precharge circuits, and periphery control logic.
• PPA Optimization: Drive power, performance, and area (PPA) trade-offs, leakage reduction, and yield/margin optimization across PVT corners.
• Simulation & Verification: Perform transistor-level SPICE simulations, Monte Carlo statistical analysis, aging/reliability checks (EM/IR, BTI/HCI), and functional equivalence verification.
• Layout & Physical Design: Guide physical layout teams on floorplanning, matching, DRC/LVS compliance, and post-layout parasitic extraction.
• Silicon Bring-Up: Collaborate with characterization, compiler,



and silicon validation teams to debug test-chip failures and correlate silicon data with SPICE models. Required Qualifications
•

Experience:
5–12 years of hands-on experience in SRAM/Memory compiler circuit design.
• Circuit Expertise: Deep understanding of CMOS transistor physics, bitcell stability (SNM, write margin), sense-amp offset, and low-power design techniques.
• EDA Tools: Proficiency in schematic capture and SPICE simulators (Cadence Virtuoso, Spectre, HSPICE, FineSim) and physical verification tools (Calibre).
• Scripting: Working knowledge of Python, Tcl, Perl, or SKILL for design automation.
•

Education:
B.
E./B.
Tech or M.
E./M.
Tech in Electronics, Electrical Engineering, or VLSI. Preferred Qualifications
• Hands-on tape-out experience in advanced FinFET or GAA (Gate-All-Around) nodes (e.g., TSMC/Samsung 7nm, 5nm, 3nm, 2nm).
• Familiarity with memory compiler architecture, liberty (.lib) timing/power modeling, and DFT/MBIST integration.
• Robust track record of post-silicon debug and yield enhancement.

📌 Senior Memory Design Engineer (Bengaluru)
🏢 Leadsoc Technologies
📍 Bengaluru

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